dmp 203 5 uvt q new product 20v p - channel enhancement mode mosfet product summary v (br)dss r ds(on) max i d t a = + 25 c - 2 0 v 35 m ? ? description this new generation mosfet has been designed to minimize the on - state resistance (r ds(on ) ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. applications ? dc- dc converters ? motor control ? power management functions ? analog switch features and benefits ? low input capacitance ? low on - resistance ? fast switching speed ? esd protected up to 3kv ? totally lead - free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) ? qualified to aec - q101 standards for high reliability ? ppap capable (note 4) mechanical data ? case: tsot2 6 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminal connections: see diagram ? terminals: finish ? mattetin annealed over copper leadframe. solderable per mil - std - 202, method 208 ? ordering information (note 5 ) part number case packaging dmp 2035uvt q - 7 t so t2 6 3 , 0 00/tape & reel dmp 2035uvt q - 13 tsot2 6 10 , 0 00/tape & reel note s: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporated?s definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green? products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. automotive products are aec - q10x qualified and are ppap capable. automotive, aec - q10x and standard products are electrically and thermally the same, except where specified. for more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/ . 5. for packaging det ails, go to our website at http: //www.diodes.com/products/packages.html . marking information date code key year 2011 2012 2013 2014 2015 2016 2017 code y z a b c d e month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d 20p = product type marking code ym = date code marking y = year (ex: y = 201 1 ) m = month (ex: 9 = september) tsot2 6 top view esd protected to 3kv top view pin - out 1 2 3 6 5 4 d d d d g s equivalent circuit source gate protection diode gate drain 20p y m e3 dmp 2 0 3 5 uvt q document number: ds 37400 rev. 1 - 2 1 of 6 www.diodes.com july 2014 ? diodes incorporated
dmp 203 5 uvt q new product maximum ratings @t a = 25c unless otherwise specified characteristic symbol value units drain - source voltage v dss - 20 v gate - source voltage v gss 1 2 v continuous drain current (note 7 ) v gs = - 4.5 v steady state t a = + 25 c t a = + 70 c i d - 6.0 - 4.8 a t<10s t a = + 25 c t a = + 70 c i d - 7.2 - 5.7 a continuous drain current (note 7 ) v gs = - 2.5 v steady state t a = + 25 c t a = + 70 c i d - 5.2 - 4.1 a t<10s t a = + 25 c t a = + 70 c i d - 6.2 - 4.9 a maximum continuous body diode f orward current (note 7 ) i s - 2.0 a pulsed drain current ( 10 s pulse, duty cycle = 1% ) i dm - 24 a thermal characteristics @t a = 25c unless otherwise specified characteristic symbol value units total power dissipation (note 6 ) p d 1.2 w thermal resistance, junction to ambient (note 6 ) s teady state r ja 106 c/w t<10s 74 total power dissipation (note 7 ) p d 2.0 w thermal resistance, junction to ambient (note 7 ) s teady state r ja 65 c/w t<10s 46 thermal resistance, junction to case (note 7 ) s teady state r electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 8 ) drain - source breakdown voltage bv dss - 2 0 ? ? ? ? ? ? on characteristics (note 8 ) gate threshold voltage v gs(th) - 0 . 4 - 0 . 7 - 1 . 5 v v ds = v gs , i d = - 250 a gate threshold voltage temperature coefficient v gs(th) / t j ? 2.5 ? mv/ c i d = - 250 a , r eferenced to + 25 c static drain - source on - resistance r ds (on) ? 23 35 m ? v gs = - 4.5 v, i d = - 4.0 a ? 30 45 v gs = - 2 .5v, i d = - 4.0 a 41 62 v gs = - 1.8 v, i d = - 2.0a forward transfer admittance |y fs | 18 s v ds = - 5 v, i d = - 5.5 a diode forward voltage (note 7 ) v sd - 0.7 - 1. 0 v v gs = 0v, i s = - 1 a dynamic characteristics (note 9 ) input capacitance c iss 1610 2400 pf v ds = - 10 v, v gs = 0v f = 1.0mhz output capacitance c oss ? ? ? ? v ds = - 10 v, v gs = - 4.5 v i d = - 4 a gate - source charge q gs ? ? ? 3.3 turn - on delay time t d(on) 1 7 33 ns v gs = - 4.5 v, v d s = - 10v, r g = 6 , i d = - 1 a , r l = 10 turn - on rise time t r ? ? ? ? ? www.diodes.com july 2014 ? diodes incorporated
dmp 203 5 uvt q new product 0 1 2 3 4 5 0 5 10 15 20 25 -i , d r a i n c u r r en t (a) d -v , drain -source voltage(v) fig. 1 typical output characteristics ds v = 3.0v gs v = 3.2v gs v = 3.5v gs v = 4.5v gs v = 8.0v gs v = 2.5v gs v = 2.0v gs v = 1.5v gs 0 0.5 1.0 1.5 2.0 2.5 3.0 0 5 10 15 20 -i , d r ai n c u r r e n t (a) d -v , gate-source voltage (v) gs fig. 2 typical transfer characteristics t = 150 c a t = 125 c a t = 85 c a t = 25 c a t = -55 c a ? ? t = 25 c a t = 85 c a t = 125 c a t = 150 c a fig. 5 on-resistance variation with temperature 0.5 0.7 0.9 1.1 1.3 1.5 1.7 r , d r a i n -s o u r c e o n - r esi s t an c e (n o rm a l i z e d ) d s ( o n ) 0.01 0.02 0.03 0.04 0.05 0.06 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) j fig. 6 on-resistance variation with temperature r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? www.diodes.com july 2014 ? diodes incorporated
dmp 203 5 uvt q new product 0 0.2 0.4 0.6 0.8 1.0 1.2 -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) fig. 7 gate threshold variation vs. ambient temperature a v , g a t e t h r es h o l d v o l t a g e(v) g s ( t h ) 0 2 4 6 8 10 12 14 16 18 20 0 0.3 0.6 0.9 1.2 1.5 -v , source-drain voltage (v) fig. 8 diode forward voltage vs. current sd - i , s o u r c e c u r r e n t (a) s 2 4 6 8 10 12 14 16 18 20 -v , drain-source voltage(v) fig. 9 typical drain-source leakage current vs. voltage ds 1 10 100 1,000 10,000 - i , l e a k a g e c u r r e n t (n a ) d s s t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a 2 4 6 8 10 1 10 100 1,000 100,000 - i , l eaka g e c u r r e n t (n a ) g s s 10,000 -v , gate-source voltage(v) fig. 10 typical gate-source leakage current vs. voltage gs t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a 0 2 4 6 8 10 12 14 16 18 20 -v , drain-source voltage (v) fig. 11 typical junction capacitance ds 100 1,000 10,000 c , j u n c t i o n c ap ac i t an c e (p f ) t c oss c rss f = 1mhz c iss 0 4 8 12 16 20 24 28 32 36 40 q , total gate charge (nc) fig. 12 gate-charge characteristics g 0 2 4 6 8 10 -v , g a t e-so u r c e vo l t ag e ( v) g s dmp 2 0 3 5 uvt q document number: ds 37400 rev. 1 - 2 4 of 6 www.diodes.com july 2014 ? diodes incorporated
dmp 203 5 uvt q new product package outline dimensions please see ap02001 at http://w ww.diodes.com/datasheets/ ap02001 .pdf for the latest version. suggested pad layout please see ap02002 at http://w ww.diodes.com/datasheets/ap02002 .pdf for the latest version. 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, pulse duration times (sec) fig. 13 transient thermal resistance 0.001 0.01 0.1 r ( t ) , t r a n s i e n t t h e r m al r e si st an c e 1 r (t) = r(t) * r ? ja ja r = 88c/w duty cycle, d = t1/ t2 ja d = 0.7 d = 0.9 d = 0.5 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 single pulse tsot26 dim min max typ a ? ? a1 0.01 0.10 ? a2 0.84 0.90 ? d ? ? e ? ? e1 ? ? b 0.30 0.45 ? c 0.12 0.20 ? e ? ? e1 ? ? l 0.30 0.50 l2 ? ? 0 8 4 1 4 12 ? all dimensions in mm dimensions value (in mm) c 0.950 x 0.700 y 1.000 y1 3.199 c a1 l e1 e a2 d e1 e 6x b www.diodes.com july 2014 ? diodes incorporated
dmp 203 5 uvt q new product important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other c hanges without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated do es not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemni fy and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized applicat ion. products described herein may be covered by one or more united states, international or foreign patents pending. product nam es and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this doc ument is written in english but may be translated into multiple languages for reference. only the english version of this do cument is the final and determinative format released by diodes incorporated. life support diodes incorporated products are speci fically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or system s which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirem ents concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. furthe r, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 2014, diodes incorporated www.diodes.com dmp 2 0 3 5 uvt q document number: ds 37400 rev. 1 - 2 6 of 6 www.diodes.com july 2014 ? diodes incorporated
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